Samsung Electronics unveiled for the first time a physical model of its eighth-generation high bandwidth memory (HBM), “HBM5,” at the information technology (IT) exhibition “Computex 2026.”

Song Jae-hyuk, President and Chief Technology Officer (CTO) of Samsung Electronics’ Semiconductor (DS) Division, introduced HBM5 at the TaiNEX 1 exhibition hall in Taipei, Taiwan, on the 2nd (local time), stating, “Based on collaboration with global companies including Nvidia, Samsung will continue to strengthen its competitiveness in next-generation memory technology.” In connection with this, Samsung Electronics explained that this “demonstrates its determination to preempt the next-generation memory market through overwhelming technological competitiveness.”

Song said that validation of next-generation thermal management technology targeting the HBM5 era has also been completed. He explained the structure of the heat protection block (HPB) technology, designed to resolve heat generation issues that arise as the performance of AI memory increases. “Samsung’s HBM5 adds a separate heat transfer path to reduce thermal resistance and enhance operational stability, which is its key strength,” he said, adding, “It will play an important role in improving overall system efficiency in future AI environments.”

Song also stressed Samsung Electronics’ unique strengths as an integrated semiconductor company, saying, “To respond to the rapidly changing AI industry, it is crucial to have solution-level competitiveness that encompasses memory, foundry (contract manufacturing), and packaging.”

At this exhibition, Samsung Electronics also showcased “HBM4E,” its seventh-generation HBM product for which it shipped the world’s first samples on May 29. Following the initial mass-production shipment in February of “HBM4,” its sixth-generation HBM product, Samsung has moved within three months to supply seventh-generation samples and unveil an eighth-generation model, accelerating efforts to cement its leadership in the HBM market.

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