Reuters reported that SK hynix is reviewing a plan to cooperate with Intel for local memory semiconductor production in the United States.

On the 16th (local time), Reuters, citing multiple sources, reported that SK hynix is discussing measures such as leasing part of the semiconductor production facilities that Intel is building in the US state of Ohio, or establishing a joint venture (JV) with Intel and major cloud companies to produce memory in the United States.

If such a cooperation plan materializes, it is drawing market attention as Intel would be able to reduce its financial burden while SK hynix could secure local production facilities without bearing construction costs.

SK hynix stated in an official position, “We are reviewing various options to strengthen global competitiveness, but nothing has been decided at this time.” However, as SK Group Chairman Chey Tae-won said in an interview with US broadcaster CNBC last month that “US customers want fabs to be built in the United States” and that he has been “examining various regions, including the United States, from multiple angles for more than a month,” some analysts see the above scenario as one of several ideas for local production.

Even if an actual agreement is reached, it is expected to require approval procedures from the Korean government. This is because high bandwidth memory (HBM) and advanced DRAM are designated as national core technologies and are therefore subject to strict review by the Ministry of Trade, Industry and Energy when produced overseas.

As pressure from the US government for investment intensifies, concerns are deepening not only for SK hynix but also for Samsung Electronics. US Secretary of Commerce Howard Lutnick has warned that if Korean and Taiwanese semiconductor companies do not increase production in the United States, tariffs of up to 100% could be imposed.

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